Infineon Pcim 2019 A Fast And Accurate Sic Mosfet Published in: pcim europe 2019; international exhibition and conference for power electronics, intelligent motion, renewable energy and energy management article #: date of conference: 07 09 may 2019 date added to ieee xplore: 22 july 2019 isbn information: print isbn: 978 3 8007 4938 6. A fast and accurate sic mosfet compact model for virtual prototyping of power electronic circuits.
Infineon Pcim 2019 Combining The Benefits Of Sic T Mosfet And Si Igbt The document discusses a compact spice model for infineon's 1200v 45mohm coolsic mosfet that accurately simulates static and dynamic behavior. the model includes separate components for the chip, package parasitics, and thermal impedance to enable circuit level simulations of full power converters. This paper discusses a spice based simulation model for the 1200 v, 45 m Ω coolsic tm sic mosfet that is both accurate and, owing to its compact structure, fast and robust in convergence. A fast and accurate sic mosfet compact model for virtual prototyping of power electronic circuits conference: pcim europe 2019 international exhibition and conference for power electronics, intelligent motion, renewable energy and energy management. Together with a turn on gate source voltage of 18 v with 5 v margin to maximum rated voltage of 23 v, the new infineon sic discrete mosfets deliver an advantage over silicon (si) igbts, super junction mosfets as well as over other sic mosfets at highest level.
Video Sebastian R On Linkedin Pcim Sic Mosfet A fast and accurate sic mosfet compact model for virtual prototyping of power electronic circuits conference: pcim europe 2019 international exhibition and conference for power electronics, intelligent motion, renewable energy and energy management. Together with a turn on gate source voltage of 18 v with 5 v margin to maximum rated voltage of 23 v, the new infineon sic discrete mosfets deliver an advantage over silicon (si) igbts, super junction mosfets as well as over other sic mosfets at highest level. This paper discusses a spice based simulation model for the 1200 v, 45 mΩcoolsic sic mosfet that is both accurate and, owing to its compact structure, fast and robust in convergence. With the safe completion of the production ramp of its silicon carbide (sic) mosfet base technology, infineon enters high volume production of a comprehensive discrete product portfolio of 1200 v coolsic mosfet devices. Even though sic devices are pricey, and the required gate driver concepts are more sophisticated with respect to, e.g., active miller clamping for suppressing parasitic turn on, significant improvements are achieved in terms of losses. Together with a turn on gate source voltage of 18v with 5v margin to maximum rated voltage of 23v, the new infineon sic discrete mosfets deliver an advantage over silicon (si) igbts, superjunction mosfets as well as over other sic mosfets at the highest level.
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